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| SMD Type Silicon Schottky Barrier Diode HSM107S Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low VF and high efficiency. HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems. MPAK package is suitable for high density surface mounting and high speed assembly. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Reverse voltage Peak forward current Non-Repetitive Peak forward surge current Average rectified current Junction temperature Storage temperature Note 1. Square wave, 10ms Symbol VR IFM IFSM (Note 1) IO Tj Tstg Value 8 0.1 0.5 50 125 -55 to +125 Unit V A A mA Electrical Characteristics Ta = 25 Parameter Reverse voltage Reverse current Forward voltage ESD-Capability (Note 1) Note 1. Failure criterion ; IR 60 A at VR =5 V Symbol VR IR VF Conditions VR =1.0 mA VR = 5 V IF = 10 mA C=200pF , Both forward and reverse direction 1 pulse. 100 Min 8 30 0.3 Typ Max Unit pF A V V Marking Marking C5 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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